Cornell sets semiconductor bandgap record with 7+ eV doped aluminum gallium oxide devices
AviatorAshley · x · 2026-11-05
Cornell engineers have created a silicon-doped aluminum gallium oxide semiconductor grown via MBE on sapphire, with a record bandgap exceeding 7 eV — far past the 6 eV threshold that long resisted attempts because wider-bandgap materials tend to act as insulators. Detailed in a Nature paper published Oct. 7, the team turned the material into working devices. Wider bandgaps withstand stronger electric fields before breakdown, promising electronics that handle higher voltages with less wasted energy for EVs and power-grid infrastructure.
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