Samsung upgrades Xian plant to 286-layer NAND, SK Hynix seeks 240 layers in Dalian
rohanpaul_ai · x · 2026-10-22
Reuters exclusive: Samsung is converting its Xian plant (40% of its global NAND output) from 200-layer to 286-layer V9 chips under project 'Monami', targeting 5,000 wafers/month in December and 40,000 by December 2027. SK Hynix plans to lift Dalian from 192-layer NAND to 240+ layers, reportedly already authorized, and may seek US permission to research 300+ layer chips there. Both say upgrades are in consultation with Washington, but Commerce said in 2025 it would license continued operation only, not capacity growth or upgrades; Samsung insists the work complies with US export rules without adding capacity.
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