Thermocompression bonding a 200mm wafer: 70 kN at 400-450°C for 20-45 min
jwt0625 · x · 2026-09-27
A technical X thread digs into thermocompression wafer bonding: applying 70 kN to a 200mm wafer at 400-450°C for 20-45 minutes (for aluminium). Commenters note Au and Cu are more common for TC bonding, mention ultrasonic flip-chip bonding with Al, and speculate about wafer-scale ultrasonic bonding. Tied to DARPA's Next Generation Microelectronics Manufacturing program.
Related event: Thermocompression Bonding Parameters for 200mm Wafers Spark Discussion(2 posts)→
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