Naura demos key etch process for 64-layer 3D DRAM without EUV, selectivity above 500:1
pstAsiatech · x · 2026-09-07
China is pursuing 3D DRAM without EUV lithography: Naura Technology has demonstrated a key etching process for 64-layer 3D DRAM, selectively removing silicon-germanium layers from a 64-layer Si/SiGe stack while preserving the silicon structure — mirroring NAND's move to vertical stacking. Reported metrics are strong: SiGe-to-Si selectivity above 500:1, silicon loss below 1 nm per cycle, and over 95% structural uniformity across all 64 layers. Deep, uniform etching is critical for 3D DRAM, potentially letting China keep scaling DRAM density despite lacking EUV access.
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