Micron roadmap skips 4F2 for 3D DRAM as planar scaling hits atomic limits
Micron's technology day roadmap shows DRAM planar scaling reaching atomic limits, so it will skip the 4F2 cell architecture and move straight to 3D DRAM, while NAND continues scaling via stacking — all aimed at meeting AI bandwidth demands.
2026-10-21 ~ 2026-10-21 · 4 related posts
- Micron DRAM hits 22 nodes in 31 years, >400x more bits per wafer since 1995 — BenBajarin · 2026-10-21
- Micron roadmap: DRAM near atomic limits goes 3D, NAND keeps stacking in xyz — BenBajarin · 2026-10-21
- Micron skips 4F2, jumps straight to 3D DRAM in new roadmap — BenBajarin · 2026-10-21
- Micron shares DRAM CMOS roadmap to meet AI bandwidth demands — BenBajarin · 2026-10-21