Applied Materials: GAA transistors pack 5+ distinct materials into ~10nm between nanosheets
BenBajarin · x · 2026-10-13
Ben Bajarin shares a slide from an Applied Materials event, captioned "Every angstrom matters." It illustrates the materials complexity behind GAA (gate-all-around) transistors: in the 10nm between silicon nanosheets, over 5 distinct materials — silicon nanosheet, gate oxide, metal gate — are stacked at 1–2nm per layer, showing how process complexity keeps climbing at interfaces.
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