TIL thermocompression bonding: 70 kN on a 200mm wafer at 400-450°C
F4DAV · x · 2026-09-27
A developer shares a TIL on thermocompression (diffusion) wafer bonding: 70 kN applied to a 200mm wafer for 20-45 minutes at 400-450°C for aluminium. Au bonds around 300°C without oxide issues, Cu needs formic-acid vapor cleaning, and Al demands high force to penetrate its oxide. Linked to DARPA's Next Generation Microelectronics Manufacturing program, with speculation about wafer-scale ultrasonic bonding next.
Related event: Thermocompression Bonding Parameters for 200mm Wafers Spark Discussion(2 posts)→
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