China narrows memory chip gap with Korea: 3 years in HBM, 1 year in NAND
robleclerc · x · 2026-09-16
Per the Korea Semiconductor Industry Association, the Korea-China memory chip gap has shrunk to one generation or less: 3 years in HBM, 2 in DRAM, 1 in NAND. CXMT is testing fifth-gen HBM3E with fabless firms including Alibaba's T-Head, aiming for products as early as next year — just one generation behind Samsung, SK hynix and Micron's HBM4. Rob Leclerc frames it starkly: if China dominates compute before the US reaches ASI, "it's all over."
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