Chinese team boosts ferroelectric memory endurance 100x, exceeding 10B write cycles in Science
pstAsiatech · x · 2026-09-14
Researchers at Xidian University, with City University of Hong Kong and Fudan University, published in Science a way to extend the endurance of wurtzite ferroelectric memory (e.g. AlScN) roughly 100-fold, demonstrating over 10 billion write cycles.
- AlScN offers fast switching, low power, and compatibility with existing chip fabrication
- The fix works by restricting nitrogen-vacancy movement, addressing the material's key reliability bottleneck
- The advance could clear the path for next-gen memory in HPC and AI hardware
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