UCSB Red MicroLEDs Hit Record 20.8% Efficiency, Stable at 200°C

ninamiolane · x · 2026-10-28

A UC Santa Barbara team published in ACS Photonics red gallium nitride microLEDs achieving a record 20.8% external quantum efficiency—the highest reported for planar red GaN microLEDs on sapphire—while maintaining strong performance at up to 200°C. The hair-thin devices were developed in a study led by PhD researcher Roark Chao.

GaN previously only produced efficient blue light; efficient red was the hard part. The result paves the way for red-green-blue microLED displays from a single material and more energy-efficient optical interconnects in data centers—relevant to power constraints in AI compute infrastructure.

Original post →

More from Infra

Infra channel →