Micron's G11 NAND doubles density vs G9 with 400+ layers, volume production in 2H 2027
rohanpaul_ai · x · 2026-10-24
Micron's next-generation NAND, G11 (skipping the G10 name), is redesigned for AI data center demand. Compared with today's G9 (276 layers), G11 stacks over 400 layers, uses wafer-on-wafer bonding and tighter cell pitch to roughly double bit density on the same silicon area, deliver up to 1.5x faster I/O, and cut energy per bit transferred by over 25%.
- Volume production starts in the second half of 2027; G11-based SSDs will arrive later
- Taller stacks and a second bonded wafer add cost — Micron hasn't said how much cheaper each gigabyte will get
- Beyond G11, Micron previews high-mobility materials, ultra-dense cell architectures, and energy-efficient data paths
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