Micron skips G10, jumps straight to G11 NAND with 2x density, ramping 2H 2027
BenBajarin · x · 2026-10-21
Micron announced a generational leap in NAND from G9 straight to G11, using wafer-on-wafer bonding, 400+ layers and industry-leading cell pitch. G11 delivers 2x bit density vs. G9, up to 1.5x I/O speed, and >25% less data transfer energy per bit, with volume ramp in 2H 2027. Beyond G11: high-mobility materials and ultra-dense cell architectures.
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