Samsung claims first working die on sub-10nm 10a DRAM, mass production eyed for 2028
zephyr_z9 · x · 2026-10-03
- Per Korean outlet THE ELEC, Samsung has produced the world's first working die on a sub-10nm '10a' DRAM node (9.5-9.7nm lines), its first use of a 4F² square cell and Vertical Channel Transistor (VCT) structure.
- The 4F² cell fits 30-50% more cells per die than the traditional 6F² layout, with gains in capacity, speed, and power. The shrunken cell area is managed by fabricating periphery circuits on a separate wafer and attaching them underneath via wafer-to-wafer hybrid bonding (PUC).
- Samsung plans to complete 10a development this year, run quality tests next year, and move to mass production in 2028, using 4F²+VCT across three generations (10a/10b/10c) before switching to 3D DRAM at 10d. Insiders say a backup team on the old roadmap existed due to failure concerns.
- A quoted tweet adds: Samsung will introduce IGZO cell transistors (replacing silicon) for DRAM in mass production in 2028 — 4F² vertical channel first, then stacked horizontal channel layers (similar to CXMT) for monolithic 3D.
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