NIST Grows Crack-Free Silicon Nitride on Sapphire

NIST researchers published an arXiv paper demonstrating crack-free, 2-micron-thick silicon nitride grown directly on sapphire with only 200 MPa stress, offering a new platform for broadband photonics.

2026-10-15 ~ 2026-10-15 · 2 related posts

• Crack-free stoichiometric silicon nitride grown on sapphire reaches 2 μm at only 200 MPa stress — jwt0625 · 2026-10-15

1 near-duplicate retellings: jwt0625